English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | STripFET™ II |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 80A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 160 nC @ 10 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 4800 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 210W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 10-PowerSO |
| 包/箱: | PowerSO-10 Exposed Bottom Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF3704ZCSIR (Infineon Technologies) |
MOSFET N-CH 20V 67A D2PAK |
|
FDMA7628Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 9.4A 6MICROFET |
|
SPI20N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.7A TO262-3 |
|
IRF3707STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 62A D2PAK |
|
IRF7807ZTRIR (Infineon Technologies) |
MOSFET N-CH 30V 11A 8SO |
|
IRL520STRRVishay / Siliconix |
MOSFET N-CH 100V 9.2A D2PAK |
|
FQPF9N08LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A TO220F |
|
IRF620STRRVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
IRLR3714TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A DPAK |
|
FDD5N50UTF_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3A DPAK |
|
SI5853DDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4A 1206-8 |
|
IRFP350LCVishay / Siliconix |
MOSFET N-CH 400V 16A TO247-3 |
|
IRFR13N20DCTRLPIR (Infineon Technologies) |
MOSFET N-CH 200V 13A DPAK |
