English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ C7 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 24A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 95mOhm @ 11.8A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 590µA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2140 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 128W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK6026DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 5A 4LDPAK |
|
STW38NB20STMicroelectronics |
MOSFET N-CH 200V 38A TO247-3 |
|
IRFS3207ZPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A D2PAK |
|
IRFIZ46NIR (Infineon Technologies) |
MOSFET N-CH 55V 33A TO220AB FP |
|
TPCC8005-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 26A 8TSON |
|
IRFR9310Vishay / Siliconix |
MOSFET P-CH 400V 1.8A DPAK |
|
AOL1432Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 25V 12A/44A ULTRASO8 |
|
SPB80N10L GIR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO263-3 |
|
FQB5N15TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 5.4A D2PAK |
|
AO3494Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 20V 3A SOT23-3 |
|
VN10LFTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 150MA SOT23-3 |
|
HAT2141H-EL-ERenesas Electronics America |
MOSFET N-CH 100V 15A LFPAK |
|
SI7860ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A PPAK SO-8 |
