English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 2.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 100mOhm @ 1.5A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | 4-DIP, Hexdip, HVMDIP |
| 包/箱: | 4-DIP (0.300", 7.62mm) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDMC8878_F126Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.6A/16.5A 8MLP |
|
SI4825DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8.1A 8SO |
|
IXFV16N80PWickmann / Littelfuse |
MOSFET N-CH 800V 16A PLUS220 |
|
DMN3112S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 5.8A SOT23-3 |
|
IRL3302STRLIR (Infineon Technologies) |
MOSFET N-CH 20V 39A D2PAK |
|
AO4435L_103Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 10.5A 8SOIC |
|
IRFU220_R4941Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 4.6A I-PAK |
|
SI1413DH-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 2.3A SC70-6 |
|
SI7170DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
|
STP8NS25FPSTMicroelectronics |
MOSFET N-CH 250V 8A TO220FP |
|
IRFSL23N20D102PIR (Infineon Technologies) |
MOSFET N-CH 200V 24A TO262 |
|
NTB75N03-6GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 75A D2PAK |
|
IRF1503LPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 75A TO262 |
