English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 20A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.4mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.45V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2890 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF3704PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 77A TO220AB |
|
SPP100N03S2L03IR (Infineon Technologies) |
MOSFET N-CH 30V 100A TO220-3 |
|
SI1039X-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 870MA SC89-6 |
|
NVMFS5C410NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 50A/330A 5DFN |
|
NTB18N06LT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
|
IPP50R520CPHKSA1IR (Infineon Technologies) |
MOSFET N-CH 550V 7.1A TO220-3 |
|
NDT451AN_J23ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.2A SOT23-3 |
|
SPW07N60CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 6.6A TO247-3 |
|
SIB417DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 8V 9A PPAK SC75-6 |
|
BUZ73A HIR (Infineon Technologies) |
MOSFET N-CH 200V 5.5A TO220-3 |
|
SPD09P06PLIR (Infineon Technologies) |
MOSFET P-CH 60V 9.7A TO252-3 |
|
BSS138_L99ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 220MA SOT23-3 |
|
FQB3N80TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 3A D2PAK |
