English
简体中文
SPEED BRACE 1/2" 15.90"
MOSFET N-CH 800V 7.2A TO3P
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.5Ohm @ 3.6A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1850 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 198W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HAT2185WPWS-ERenesas Electronics America |
MOSFET N-CH 150V 10A 8WPAK |
|
STP95N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A TO220AB |
|
IRLR8103IR (Infineon Technologies) |
MOSFET N-CH 30V 89A D-PAK |
|
SSM3K315T(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 6A TSM |
|
HAT2169H-EL-ERenesas Electronics America |
MOSFET N-CH 40V 50A LFPAK |
|
HUFA75429D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A DPAK |
|
IXFE24N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 22A SOT227B |
|
IXFN44N50U3Wickmann / Littelfuse |
MOSFET N-CH 500V 44A SOT-227B |
|
IPA50R190CEIR (Infineon Technologies) |
MOSFET N-CH 500V 18.5A TO220-FP |
|
NTMS4503NR2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 28V 9A 8SOIC |
|
BUK9518-55A,127Nexperia |
MOSFET N-CH 55V 61A TO220AB |
|
IRFI9634GVishay / Siliconix |
MOSFET P-CH 250V 4.1A TO220-3 |
|
IRF7811AVTRPBF-1IR (Infineon Technologies) |
MOSFET N-CH 30V 10.8A 8SO |