English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 105mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 13 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 446 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFR9020TRVishay / Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
|
IPD90N06S405ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IRL3714STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
NTD5406NGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 12.2A/70A DPAK |
|
RJK6014DPK-00#T0Renesas Electronics America |
MOSFET N-CH 600V 16A TO3P |
|
GA100JT17-227GeneSiC Semiconductor |
TRANS SJT 1700V 160A SOT227 |
|
NTD4302T4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.4A/68A DPAK |
|
ZVP4525E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 250V 197MA SOT23-6 |
|
IRFR1010ZIR (Infineon Technologies) |
MOSFET N-CH 55V 42A DPAK |
|
BUK9Y30-75B/C2,115Nexperia |
MOSFET N-CH 75V 34A LFPAK56 |
|
FQPF1N60TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 900MA TO220F |
|
SSM3K302T(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 3A TSM |
|
IPI16CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 53A TO262-3 |
