类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 150 V |
电流 - 连续漏极 (id) @ 25°c: | 420mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 2.6Ohm @ 500mA, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 100µA |
栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-70-6 (SOT-363) |
包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
ZXM64P035L3Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 35V 3.3A/12A TO220-3 |
|
IXFH80N30P3Wickmann / Littelfuse |
MOSFET N-CH 300V 80A TO-247 |
|
SPD35N10IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO252-3 |
|
IRF7726TRIR (Infineon Technologies) |
MOSFET P-CH 30V 7A MICRO8 |
|
STU11NM60NDSTMicroelectronics |
MOSFET N-CH 600V 10A IPAK |
|
IPB26CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 35A D2PAK |
|
IXFV74N20PWickmann / Littelfuse |
MOSFET N-CH 200V 74A PLUS220 |
|
IRFBC30LPBFVishay / Siliconix |
MOSFET N-CH 600V 3.6A TO262-3 |
|
ZVN2106GTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 710MA SOT223 |
|
NVMFS5C456NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
SI7601DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 16A PPAK1212-8 |
|
NDB4050LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 15A D2PAK |
|
IRFB3077GPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO220AB |