English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 20V |
| rds on (max) @ id, vgs: | 14mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 45 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 2500 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO3424_102Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V SOT23 |
|
STP12NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A TO220AB |
|
FQA17P10Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 100V 18A TO3P |
|
NVTFS5824NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A 8WDFN |
|
IPI120P04P404AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 120A TO262-3 |
|
AOD498Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 2.5A/11A TO252 |
|
IPI65R280E6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13.8A TO262-3 |
|
IRFR224TRRVishay / Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
|
IRF7739L2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 46A DIRECTFET |
|
FDH27N50Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 27A TO247-3 |
|
STT2PF60LSTMicroelectronics |
MOSFET P-CH 60V 2A SOT23-6 |
|
IXUN350N10Wickmann / Littelfuse |
MOSFET N-CH 100V 350A SOT-227B |
|
NTJS4405NT4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 1A SC88/SC70-6 |
