English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS V® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 57A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 70mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 495 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 8890 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 520W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 [L] |
| 包/箱: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI35CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 27A TO262-3 |
|
IPD230N06NGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A TO252-3 |
|
NTP60N06GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 60A TO220AB |
|
RFP30P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 30A TO220-3 |
|
AO4485_102Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 40V 10A 8SO |
|
UPA2735GR-E1-AXRenesas Electronics America |
MOSFET P-CH 30V 16A 8SOP |
|
IRL540SVishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
IRF737LCSTRRVishay / Siliconix |
MOSFET N-CH 300V 6.1A D2PAK |
|
IRFR9120NTRLIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A DPAK |
|
IRF7452TRIR (Infineon Technologies) |
MOSFET N-CH 100V 4.5A 8SO |
|
SUM110N03-04P-E3Vishay / Siliconix |
MOSFET N-CH 30V 110A TO263 |
|
IRFBC40ASTRLVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
RJL5012DPE-00#J3Renesas Electronics America |
MOSFET N-CH 500V 12A 4LDPAK |
