English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.1Ohm @ 1.55A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 420 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 45W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDPF15N65YDTUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 15A TO220F-3 |
|
2SK3313(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 12A TO220NIS |
|
FDMS5362L-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17.6A POWER56 |
|
MTD6N20ET4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6A DPAK |
|
BSS119L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
IRLR3303TRIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
|
IRF3708STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 62A D2PAK |
|
BUK7908-40AIE,127Nexperia |
MOSFET N-CH 40V 75A TO220-5 |
|
BSC027N03S GIR (Infineon Technologies) |
MOSFET N-CH 30V 25A/100A TDSON |
|
IRL1004LPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 130A TO262 |
|
FQB2N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.4A D2PAK |
|
FDMC7692S-F127Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.5A/18A 8MLP |
|
IPI200N15N3 GIR (Infineon Technologies) |
MOSFET N-CH 150V 50A TO262-3 |
