English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 45A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.8mOhm @ 22.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4400 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 25W (Tc) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-LFPAK |
| 包/箱: | SC-100, SOT-669 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS6B03NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 132A 5DFN |
|
IRF3710LIR (Infineon Technologies) |
MOSFET N-CH 100V 57A TO262 |
|
IRF6623TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 16A DIRECTFET |
|
SI7774DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
IPB100N06S3L-04IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
AO4447A_201Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 18.5A 8SOIC |
|
SI5913DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 4A 1206-8 |
|
SPB35N10TIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO263-3 |
|
IRFZ24LVishay / Siliconix |
MOSFET N-CH 60V 17A TO262-3 |
|
2SK3820-DL-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 26A TO263-2 |
|
SI7302DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 220V 8.4A PPAK1212-8 |
|
BSS131E6327IR (Infineon Technologies) |
MOSFET N-CH 240V 110MA SOT23-3 |
|
PSMN011-30YL,115NXP Semiconductors |
MOSFET N-CH 30V 51A LFPAK56 |
