English
简体中文
SMA-SJ/N-RJB RG58 0.25M
SMA-SJB/SMB-SJB G316 2M
TVS DIODE 356V 631V DO204AC
MOSFET N-CH 40V 9A 8SO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 17mOhm @ 9A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2000 pF @ 20 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQA65N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 72A TO3P |
|
IPP080N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO220-3 |
|
IRFH5106TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 21A/100A 8PQFN |
|
IRLR7811WCTRLPIR (Infineon Technologies) |
MOSFET N-CH 30V 64A DPAK |
|
AON7410LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8A/20A 8DFN |
|
AUIRFS3806TRLIR (Infineon Technologies) |
MOSFET N-CH 60V 43A D2PAK |
|
IRFR1N60ATRVishay / Siliconix |
MOSFET N-CH 600V 1.4A DPAK |
|
IXFH58N20Wickmann / Littelfuse |
MOSFET N-CH 200V 58A TO247AD |
|
IRFZ34SVishay / Siliconix |
MOSFET N-CH 60V 30A D2PAK |
|
IRL620STRRVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
|
2SK3826Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 26A TO220 |
|
IXUC100N055Wickmann / Littelfuse |
MOSFET N-CH 55V 100A ISOPLUS220 |
|
IRF9540NSTRRIR (Infineon Technologies) |
MOSFET P-CH 100V 23A D2PAK |