English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 45.1A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 42mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1770 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 230W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF634STRRVishay / Siliconix |
MOSFET N-CH 250V 8.1A D2PAK |
|
IRFR540ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 35A DPAK |
|
SI5445BDC-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 5.2A 1206-8 |
|
FCP20N60_GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20A TO220-3 |
|
SI7459DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 13A PPAK SO-8 |
|
FQPF44N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 27A TO220F |
|
IRFR3708TRRIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
TPC6008-H(TE85L,FMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 5.9A VS-6 |
|
PMN23UN,165NXP Semiconductors |
MOSFET N-CH 20V 6.3A 6TSOP |
|
STW240N10F7STMicroelectronics |
MOSFET N-CH 100V 180A TO247 |
|
IRF6637TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A DIRECTFET |
|
STF6NK70ZSTMicroelectronics |
MOSFET N-CH 700V 5A TO220FP |
|
AOTF11C60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
