English
简体中文
CUT-TAPE VERSION. STANDARD RECO
MOSFET N-CH 600V 26A TO268
SENS HUMID/TMP 3.3V SPI 1.7% SMD
CONN NON-GENDERED HSG 12POS NAT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 26A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 250mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 200 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 360W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-268 |
| 包/箱: | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI100N06S3-03IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO262-3 |
|
IRLR3715ZTRRIR (Infineon Technologies) |
MOSFET N-CH 20V 49A DPAK |
|
IRL3715SPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 54A D2PAK |
|
STP80N70F6STMicroelectronics |
MOSFET N-CH 68V 96A TO220 |
|
SPI80N03S2L-04IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO262-3 |
|
AO4482L_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 6A 8SOIC |
|
SIA439EDJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 28A PPAK SC70-6 |
|
ECH8601M-C-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 8A ECH8 |
|
FDMC7672S-F126Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 14.8A 8MLP |
|
ZXMN4A06KTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 7.2A TO252-3 |
|
PSMN006-20K,518Nexperia |
MOSFET N-CH 20V 32A 8SO |
|
IRFR12N25DTRPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 14A DPAK |
|
BSP298 E6327IR (Infineon Technologies) |
MOSFET N-CH 400V 500MA SOT223-4 |