类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 1.32A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
rds on (max) @ id, vgs: | 89mOhm @ 1.32A, 4.5V |
vgs(th) (最大值) @ id: | 950mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.7 nC @ 5 V |
vgs (最大值): | ±8V |
输入电容 (ciss) (max) @ vds: | 400 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 236mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SC-89-6 |
包/箱: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
ZXM64P035GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 35V 3.8A/5.3A SOT223 |
![]() |
IRL620SVishay / Siliconix |
MOSFET N-CH 200V 5.2A D2PAK |
![]() |
STD3NM60-1STMicroelectronics |
MOSFET N-CH 600V 3A IPAK |
![]() |
IRLZ24NSIR (Infineon Technologies) |
MOSFET N-CH 55V 18A D2PAK |
![]() |
IRFR014TRRVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
![]() |
AOB210LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/105A TO263 |
![]() |
IRL1104LPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 104A TO262 |
![]() |
SI4833ADY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 4.6A 8SO |
![]() |
ZXM64N035GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 35V 4.8A/6.7A SOT223 |
![]() |
RJK03C1DPB-00#J5Renesas Electronics America |
MOSFET N-CH 30V 60A LFPAK |
![]() |
FCPF7N60TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 7A TO220F |
![]() |
IRF9630STRRVishay / Siliconix |
MOSFET P-CH 200V 6.5A D2PAK |
![]() |
STF9NK80ZSTMicroelectronics |
MOSFET N-CH 800V 7.5A TO220FP |