English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 27mOhm @ 5.9A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 32 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 1206-8 ChipFET™ |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD80R2K8CEBTMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 1.9A TO252-3 |
|
STW19NM65NSTMicroelectronics |
MOSFET N-CH 650V 15.5A TO247-3 |
|
IRFB17N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 16A TO220AB |
|
SI1450DH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 8V 4.53A/6.04A SC70 |
|
AOU3N60_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2.5A TO251-3 |
|
IRF9Z34Vishay / Siliconix |
MOSFET P-CH 60V 18A TO220AB |
|
AON6232AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 40V 35A/85A 8DFN |
|
FDMC6675BZ-TSanyo Semiconductor/ON Semiconductor |
INTEGRATED CIRCUIT |
|
2N7002W-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT-323 |
|
IXFV18N90PSWickmann / Littelfuse |
MOSFET N-CH 900V 18A PLUS-220SMD |
|
SFU9220TU_F080Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 3.1A IPAK |
|
DMS3016SSSA-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 9.8A 8SO |
|
IRFL024ZPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 5.1A SOT223 |
