English
简体中文
CAP CER 4.7PF 63V C0G/NP0 1206
REC 40AMP 400V DO5
MOSFET P-CH 20V 5.4A 8SO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.7V, 4.5V |
| rds on (max) @ id, vgs: | 60mOhm @ 5.4A, 4.5V |
| vgs(th) (最大值) @ id: | 700mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 22 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 780 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RJK0451DPB-00#J5Renesas Electronics America |
MOSFET N-CH 40V 35A LFPAK |
|
STF26NM60N-HSTMicroelectronics |
MOSFET N-CH 600V 20A TO220FP |
|
RSS110N03TBROHM Semiconductor |
MOSFET N-CH 30V 11A 8SOP |
|
IRFH7185TRPBFIR (Infineon Technologies) |
MOSFET N CH 100V 19A 8QFN |
|
BUK9240-100A/C1,11NXP Semiconductors |
MOSFET N-CH 100V 33A DPAK |
|
RJK1052DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 20A LFPAK |
|
IRF6644TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A DIRECTFET |
|
SPB03N60S5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3.2A TO263-3 |
|
ZXM66P02N8TAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 6.4A 8SO |
|
NP90N06VLG-E1-AYRenesas Electronics America |
MOSFET N-CH 60V 90A TO252 |
|
NTDV2955PT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 12A DPAK |
|
IRF3610SPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 103A D2PAK |
|
AON6758_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 27A/32A 8DFN |