类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 9.5mOhm @ 37.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4510 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.4W (Ta), 214W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPD250N06N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 28A TO252-3 |
|
PSMN050-80PS,127NXP Semiconductors |
MOSFET N-CH 80V 22A TO220AB |
|
SPI42N03S2L-13IR (Infineon Technologies) |
MOSFET N-CH 30V 42A TO262-3 |
|
NP88N04KUG-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 88A TO263 |
|
IRF3315SIR (Infineon Technologies) |
MOSFET N-CH 150V 21A D2PAK |
|
2SK3670,F(JToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
|
STP11NM60ASTMicroelectronics |
MOSFET N-CH 600V 11A TO220AB |
|
IXFP12N50PMWickmann / Littelfuse |
MOSFET N-CH 500V 6A TO220AB |
|
STF260N4F7STMicroelectronics |
MOSFET N-CH 40V 90A TO220FP |
|
FDP4020PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 16A TO220-3 |
|
IRFR120_R4941Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.4A TO252AA |
|
IXFT6N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 6A TO268 |
|
AOD2610Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 10A/46A TO252 |