English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V, 10V |
| rds on (max) @ id, vgs: | 1.35Ohm @ 1.9A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 5.2 nC @ 5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 310 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.13W (Ta), 45W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I2PAK (TO-262) |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STW25NM60NSTMicroelectronics |
MOSFET N-CH 600V 21A TO247-3 |
|
IRFR3303TRIR (Infineon Technologies) |
MOSFET N-CH 30V 33A DPAK |
|
SI7405BDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 16A PPAK1212-8 |
|
IRFBE30Vishay / Siliconix |
MOSFET N-CH 800V 4.1A TO220AB |
|
IRL3716STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 180A D2PAK |
|
UPA2737GR-E1-AXRenesas Electronics America |
MOSFET P-CH 30V 11A 8SOP |
|
IRLI630GVishay / Siliconix |
MOSFET N-CH 200V 6.2A TO220-3 |
|
IXTU05N100Wickmann / Littelfuse |
MOSFET N-CH 1000V 750MA TO251 |
|
STP21NM50NSTMicroelectronics |
MOSFET N-CH 500V 18A TO220AB |
|
NTD78N03Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 11.4A/78A DPAK |
|
IRLZ24NLPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 18A TO262 |
|
AO4304Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 30V 18A 8SOIC |
|
IRFU3710ZIR (Infineon Technologies) |
MOSFET N-CH 100V 42A IPAK |
