English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 37A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 15mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.55V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.1 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 560 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 35W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR8113IR (Infineon Technologies) |
MOSFET N-CH 30V 94A DPAK |
|
AUIRF4104IR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO220 |
|
IRLR8103VTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 91A DPAK |
|
NTD110N02RST4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 100A DPAK |
|
TK4P60DA(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 3.5A DPAK |
|
IRFR2605IR (Infineon Technologies) |
MOSFET N-CH 55V 19A D-PAK |
|
AO4722Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8.5A 8SOIC |
|
IPD50R380CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO252-3 |
|
AON6210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/85A 8DFN |
|
BUK9535-55,127NXP Semiconductors |
MOSFET N-CH 55V 34A TO220AB |
|
NDS0610_NLSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 120MA SOT23-3 |
|
NTB75N03-6T4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 75A D2PAK |
|
IPS50R520CPAKMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 7.1A TO251-3 |
