English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 150mOhm @ 1.7A, 4.5V |
| vgs(th) (最大值) @ id: | 600mV @ 250µA (Min) |
| 栅极电荷 (qg) (max) @ vgs: | 4 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 568mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-70-6 (SOT-363) |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2SK1342-ERenesas Electronics America |
MOSFET N-CH 900V 8A TO3P |
|
HAT1072H-EL-ERenesas Electronics America |
MOSFET P-CH 30V 40A LFPAK |
|
NVMFS5C410NWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
TPC8A02-H(TE12L,Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 16A 8SOP |
|
BUZ73IR (Infineon Technologies) |
MOSFET N-CH 200V 7A TO220-3 |
|
FDC5614P_D87ZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A SUPERSOT6 |
|
MIC94031BM4 TRRoving Networks / Microchip Technology |
MOSFET P-CH 16V 1A SOT-143 |
|
AOY528Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 17A/50A TO251B |
|
SI4620DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 6A/7.5A 8SO |
|
IXTF250N075TWickmann / Littelfuse |
MOSFET N-CH 75V 140A I4PAC |
|
STD5NK50Z-1STMicroelectronics |
MOSFET N-CH 500V 4.4A IPAK |
|
TPC8042(TE12L,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 18A 8SOP |
|
DMN2104L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 4.3A SOT23-3 |
