English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 31mOhm @ 5A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 310 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.4W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQP18N20V2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 18A TO220-3 |
|
FQB5P20TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 4.8A D2PAK |
|
APT7F80KMicrosemi |
MOSFET N-CH 800V 7A TO220 |
|
NTB75N03-06T4Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 75A D2PAK |
|
IRF3711ZSTRLIR (Infineon Technologies) |
MOSFET N-CH 20V 92A D2PAK |
|
SI1426DH-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 2.8A SC70-6 |
|
PMV90EN,215NXP Semiconductors |
MOSFET N-CH 30V 1.9A TO236AB |
|
STB30NM60NDSTMicroelectronics |
MOSFET N-CH 600V 25A D2PAK |
|
IXTA5N50PWickmann / Littelfuse |
MOSFET N-CH 500V 4.8A TO263 |
|
IXFR40N50Q2Wickmann / Littelfuse |
MOSFET N-CH 500V 29A ISOPLUS247 |
|
SI1051X-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 1.2A SC89-6 |
|
IPP05N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
IRF6617TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A DIRECTFET |
