类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 12A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 104mOhm @ 6A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 20 nC @ 5 V |
vgs (最大值): | ±15V |
输入电容 (ciss) (max) @ vds: | 440 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 1.5W (Ta), 48W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRF4104LPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 75A TO262 |
![]() |
ZXMN3A01E6TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 2.4A SOT23-6 |
![]() |
IXTC180N085TWickmann / Littelfuse |
MOSFET N-CH 85V 110A ISOPLUS220 |
![]() |
BUK9Y12-80E,115Nexperia |
MOSFET N-CH 80V LFPAK56 PWR-SO8 |
![]() |
SI1031X-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 155MA SC75A |
![]() |
2SK2917(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 18A TO3PIS |
![]() |
IRLR4343-701PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 26A IPAK |
![]() |
TK16C60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A I2PAK |
![]() |
AOTF10N60L_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 10A TO220-3F |
![]() |
RJK6032DPD-00#J2Renesas Electronics America |
MOSFET N-CH 600V 3A MP3A |
![]() |
IRF6636TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 18A DIRECTFET |
![]() |
IRF6722MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A DIRECTFET |
![]() |
IRF9540NLIR (Infineon Technologies) |
MOSFET P-CH 100V 23A TO262 |