类型 | 描述 |
---|---|
系列: | QFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 120mOhm @ 8.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
vgs (最大值): | ±25V |
输入电容 (ciss) (max) @ vds: | 900 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 3.75W (Ta), 79W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I2PAK (TO-262) |
包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AOD208Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/54A TO252 |
|
IRF7241TRIR (Infineon Technologies) |
MOSFET P-CH 40V 6.2A 8SO |
|
BUK7520-55A,127Nexperia |
MOSFET N-CH 55V 54A TO220AB |
|
FDS4435Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 8.8A 8SOIC |
|
BSS123L6433HTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
AON6400Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 31A/85A 8DFN |
|
SI7403BDN-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 8A PPAK1212-8 |
|
IRFR3504TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 30A DPAK |
|
IPD60R650CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7A TO252-3 |
|
AON7200Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15.8A/40A 8DFN |
|
NTA7002NT1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 154MA SC75 |
|
IPB097N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 70A D2PAK |
|
STD10PF06T4STMicroelectronics |
MOSFET P-CH 60V 10A DPAK |