English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 46A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 93mOhm @ 23A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 6100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 120W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3PF |
| 包/箱: | TO-3P-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF614STRLVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
FQB7N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 6.5A D2PAK |
|
SPI07N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO262-3 |
|
AON6786_001Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 24A/85A 8DFN |
|
IRFU15N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 17A IPAK |
|
IRF3709ZCSTRLIR (Infineon Technologies) |
MOSFET N-CH 30V 87A D2PAK |
|
AO4435L_104Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 10.5A 8SOIC |
|
IPP80N04S3-04IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
|
IPU60R600C6AKMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO251-3 |
|
NP88N055KUG-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 88A TO263 |
|
AO4202LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 19A 8SO |
|
BUK954R4-40B,127Nexperia |
MOSFET N-CH 40V 75A TO220AB |
|
PMR670UPE,115NXP Semiconductors |
MOSFET P-CH 20V 480MA SC75 |
