English
简体中文
MOSFET N-CH 30V SC89-6
ENCLOSURE NETWORK ZONE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 93mOhm @ 1.3A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 280 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 236mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-89-6 |
| 包/箱: | SOT-563, SOT-666 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSP299 E6327IR (Infineon Technologies) |
MOSFET N-CH 500V 400MA SOT223-4 |
|
IPD49CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 20A TO252-3 |
|
IRFZ44RVishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
IRFSL4227PBFIR (Infineon Technologies) |
MOSFET N-CH 200V 62A TO262 |
|
FQU4N20TUSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3A IPAK |
|
NTMFS4821NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
|
AO4476A_104Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 15A 8SO |
|
HUFA75842S3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 43A D2PAK |
|
IRFR220NTRIR (Infineon Technologies) |
MOSFET N-CH 200V 5A DPAK |
|
SI4660DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 25V 23.1A 8SO |
|
IRL3705NSTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 89A D2PAK |
|
NTD14N03RSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 2.5A DPAK |
|
IXFH52N30QWickmann / Littelfuse |
MOSFET N-CH 300V 52A TO247AD |