English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 2.4mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 150µA |
| 栅极电荷 (qg) (max) @ vgs: | 240 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6320 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 290W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF3707ZCSIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
IRF6614TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 12.7A DIRECTFET |
|
RFP40N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 40A TO220-3 |
|
IXTP110N12T2Wickmann / Littelfuse |
MOSFET N-CH 120V 110A TO220AB |
|
IPI45P03P4L11AKSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 45A TO262-3 |
|
IRF3704LPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 77A TO262 |
|
BSC042N03STIR (Infineon Technologies) |
MOSFET N-CH 30V 20A/50A TDSON |
|
BSS169L6906HTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
FDB8132_F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
|
ZVN3306ASTOBZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA E-LINE |
|
IXFX60N55Q2Wickmann / Littelfuse |
MOSFET N-CH 550V 60A PLUS247-3 |
|
IRFH7107TRPBFIR (Infineon Technologies) |
MOSFET N-CH 75V 14A/75A 8PQFN |
|
IXFH76N07-11Wickmann / Littelfuse |
MOSFET N-CH 70V 76A TO247AD |
