English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 19A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 200mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 61 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
HUF76419S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 29A D2PAK |
|
SIA850DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 190V 950MA PPAK |
|
2N7002TAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT23-3 |
|
PMFPB6545UP,115NXP Semiconductors |
MOSFET P-CH 20V 3.5A DFN2020-6 |
|
BSS126L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
2SK3483-AZRenesas Electronics America |
MOSFET N-CH 100V 28A TO251 |
|
FQP19N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 19A TO220-3 |
|
IXTH06N220P3HVWickmann / Littelfuse |
MOSFET N-CH 2200V 600MA TO247HV |
|
IRL510STRLVishay / Siliconix |
MOSFET N-CH 100V 5.6A D2PAK |
|
IRFU9120NIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A IPAK |
|
BSS123 E6433IR (Infineon Technologies) |
MOSFET N-CH 100V 170MA SOT23-3 |
|
TSM2NB60CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 2A TO252 |
|
2N7000GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
