English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 90A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 120 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4700 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.75W (Ta), 272W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (D2Pak) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AO6701Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 2.3A 6TSOP |
|
IPI06CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO262-3 |
|
SI7495DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 13A PPAK SO-8 |
|
AOI516Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 18A/46A TO251A |
|
AOD2610_002Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V TO-252 |
|
AON2401Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 8V 8A 6DFN |
|
NTTFS4932NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/79A 8WDFN |
|
SFT1452-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 3A DPAK/TP-FA |
|
IXFJ40N30Wickmann / Littelfuse |
MOSFET N-CH 300V 40A TO268 |
|
TSM3404CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 30V 5.8A SOT23 |
|
SI4409DY-T1-E3Vishay / Siliconix |
MOSFET P-CH 150V 1.3A 8SO |
|
IRF9610LVishay / Siliconix |
MOSFET P-CH 200V 1.8A I2PAK |
|
STP5NK60ZFPSTMicroelectronics |
MOSFET N-CH 600V 5A TO220FP |
