类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 2.6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 130mOhm @ 2.6A, 10V |
vgs(th) (最大值) @ id: | 1.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 5.3 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 500 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 1.4W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFD420Vishay / Siliconix |
MOSFET N-CH 500V 370MA 4DIP |
|
SUD25N04-25-T4-E3Vishay / Siliconix |
MOSFET N-CH 40V 25A TO252 |
|
FQPF55N10Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 34.2A TO220F |
|
IRFR3707TRRIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
IRFH4213TRPBFIR (Infineon Technologies) |
MOSFET N-CH 25V 41A PQFN |
|
IRF6708S2TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 13A DIRECTFET S1 |
|
AO4264_101Alpha and Omega Semiconductor, Inc. |
MOSFET N-CHANNEL 60V 12A 8SO |
|
IRFSL11N50AVishay / Siliconix |
MOSFET N-CH 500V 11A TO262-3 |
|
IRF6665TR1IR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
|
IRL3302IR (Infineon Technologies) |
MOSFET N-CH 20V 39A TO220AB |
|
IXFN48N50U2Wickmann / Littelfuse |
MOSFET N-CH 500V 48A SOT-227B |
|
IRLZ34NSTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 30A D2PAK |
|
FQAF58N08Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 44A TO3PF |