类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 8A (Ta), 19A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 37.5mOhm @ 12A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 432 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 4.2W (Ta), 21W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-251A |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTTFS4C56NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 65A 8WDFN |
|
SSM3K35MFV(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 180MA VESM |
|
AOD418GAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13.5A/36A TO252 |
|
SIR406DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 40A PPAK SO-8 |
|
IXFN260N17TWickmann / Littelfuse |
MOSFET N-CH 170V 245A SOT227B |
|
IRLZ44NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 47A D2PAK |
|
ZXMN6A07FTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 1.2A SOT23-3 |
|
IRFU5410IR (Infineon Technologies) |
MOSFET P-CH 100V 13A IPAK |
|
BSS131L6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 110MA SOT23-3 |
|
SI4642DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 34A 8SO |
|
IRF7425TRIR (Infineon Technologies) |
MOSFET P-CH 20V 15A 8SO |
|
STK20N75F3STMicroelectronics |
MOSFET N-CH 75V 20A POLARPAK |
|
IXTC250N075TWickmann / Littelfuse |
MOSFET N-CH 75V 128A ISOPLUS220 |