类型 | 描述 |
---|---|
系列: | STripFET™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 4.8mOhm @ 60A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | 300W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFP4410ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A TO247AC |
|
SI4660DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 23.1A 8SO |
|
IRFU9120NPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 6.6A IPAK |
|
IRFS644B_FP001Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 14A TO220F |
|
SUD50P08-26-E3Vishay / Siliconix |
MOSFET P-CH 80V 50A TO252 |
|
IRL630SVishay / Siliconix |
MOSFET N-CH 200V 9A D2PAK |
|
SIA450DJ-T1-E3Vishay / Siliconix |
MOSFET N-CH 240V 1.52A PPAK |
|
IRL1004SIR (Infineon Technologies) |
MOSFET N-CH 40V 130A D2PAK |
|
NTMFS4834NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 13A/130A 5DFN |
|
PH16030L,115NXP Semiconductors |
MOSFET N-CH 30V 38A LFPAK56 |
|
IRFZ48ZIR (Infineon Technologies) |
MOSFET N-CH 55V 61A TO220AB |
|
TPCC8003-H(TE12LQMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 13A 8TSON |
|
PHK4NQ10T,518NXP Semiconductors |
MOSFET N-CH 100V 8SO |