English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerMESH™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6Ohm @ 1.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 30 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 700 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 100W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL3714SPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A D2PAK |
|
IRF7424GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
IPB80N06S2L05ATMA1IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO263-3 |
|
FQP1P50Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 1.5A TO220-3 |
|
IRL3103D1IR (Infineon Technologies) |
MOSFET N-CH 30V 64A TO220AB |
|
IPP037N08N3GE8181XKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 100A TO220-3 |
|
IRF540ZLIR (Infineon Technologies) |
MOSFET N-CH 100V 36A TO262 |
|
IRL2203NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 116A D2PAK |
|
STP180N55F3STMicroelectronics |
MOSFET N-CH 55V 120A TO220AB |
|
PHP78NQ03LT,127NXP Semiconductors |
MOSFET N-CH 25V 75A TO220AB |
|
TSM10N06CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 60V 10A TO252 |
|
STD7NK30ZSTMicroelectronics |
MOSFET N-CH 300V 5A DPAK |
|
IRLW510ATMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 5.6A I2PAK |
