English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18A (Ta), 46A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 5mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 33 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1229 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 50W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRFL9014Vishay / Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
|
IPL65R190E6AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 20.2A 4VSON |
|
IRF820ALVishay / Siliconix |
MOSFET N-CH 500V 2.5A I2PAK |
|
IRL5602STRRIR (Infineon Technologies) |
MOSFET P-CH 20V 24A D2PAK |
|
HUFA76423D3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A TO252AA |
|
IRFS23N20DPBFIR (Infineon Technologies) |
MOSFET N-CH 200V 24A D2PAK |
|
ZVN4424ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 240V 260MA E-LINE |
|
BSC022N03SIR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
IXFH58N20QWickmann / Littelfuse |
MOSFET N-CH 200V 58A TO247AD |
|
SIR850DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 25V 30A PPAK SO-8 |
|
NVMFS5C442NWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 29A/140A 5DFN |
|
2N6764Microsemi |
MOSFET N-CH 100V 38A TO3 |
|
SPA03N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.2A TO220-FP |
