HEATSINK 60X60X15MM XCUT T766
MOSFET N-CH 55V 10A DPAK
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 140mOhm @ 6A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 7.9 nC @ 5 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 265 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 28W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D-Pak |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SIS426DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 35A PPAK1212-8 |
|
AUIRF7739L2IR (Infineon Technologies) |
MOSFET N-CH 40V 46A DIRECTFET |
|
IXTN320N10TWickmann / Littelfuse |
MOSFET N-CH 100V 320A SOT-227B |
|
FQD2N40TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 1.4A DPAK |
|
IRFR3103IR (Infineon Technologies) |
MOSFET N-CH 400V 1.7A DPAK |
|
IRFR5505CTRLPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |
|
STP9NK60ZDSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
|
IRL3713SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 260A D2PAK |
|
SPI80N06S2-08IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO262-3 |
|
FCD4N60TM_WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
|
TSM230N06CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 50A TO220 |
|
BSS126L6906HTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21MA SOT23-3 |
|
APT18F60SMicrosemi |
MOSFET N-CH 600V 19A D3PAK |