English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 7.7A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 3.9A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1430 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 152W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI1046X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V SC89-3 |
|
SI5432DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A 1206-8 |
|
FQPF10N60CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |
|
IPD60R600C6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 7.3A TO252-3 |
|
AOTF2N60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 2A TO220-3F |
|
DMN4027SSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 6A 8SO |
|
IPU13N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO251-3 |
|
PH4830L,115NXP Semiconductors |
MOSFET N-CH 30V 84A LFPAK56 |
|
IRF6215SPBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A D2PAK |
|
NVMFS5844NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11.2A 5DFN |
|
SPA12N50C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 560V 11.6A TO220-FP |
|
AON2407Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 6.3A 6DFN |
|
IRF7807D2TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
