English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 28A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 5V |
| rds on (max) @ id, vgs: | 77mOhm @ 17A, 5V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 64 nC @ 5 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262-3 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF7475TRPBFIR (Infineon Technologies) |
MOSFET N-CH 12V 11A 8SO |
|
IPB136N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 45A D2PAK |
|
FDI3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A I2PAK |
|
RJK6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
|
TSM4NB60CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO220 |
|
IPD180N10N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO252-3 |
|
BXL4004-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A TO220-3 |
|
IRFR020PBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IRFZ48STRRVishay / Siliconix |
MOSFET N-CH 60V 50A D2PAK |
|
NCV8440STT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 59V 2.6A SOT223 |
|
IXTU5N50PWickmann / Littelfuse |
MOSFET N-CH 500V 4.8A TO252 |
|
IXFT30N60PWickmann / Littelfuse |
MOSFET N-CH 600V 30A TO268 |
|
IRFZ44ESTRRIR (Infineon Technologies) |
MOSFET N-CH 60V 48A D2PAK |
