RES SMD 46.4K OHM 0.1% 1/4W 1206
HEATSINK 45X45X15MM R-TAB T766
CRYSTAL 9.8304MHZ 18PF TH
MOSFET P-CH 20V 2.2A 8SO
类型 | 描述 |
---|---|
系列: | FETKY™ |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 2.2A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.7V, 4.5V |
rds on (max) @ id, vgs: | 270mOhm @ 1.2A, 4.5V |
vgs(th) (最大值) @ id: | 700mV @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 7.8 nC @ 4.5 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 260 pF @ 15 V |
场效应管特征: | Schottky Diode (Isolated) |
功耗(最大值): | 2W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SO |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXFH20N60QWickmann / Littelfuse |
MOSFET N-CH 600V 20A TO247AD |
|
IRF7424TRIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
IRF9520STRRVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
|
IRF3707ZSPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
FDC3512_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 3A SUPERSOT6 |
|
IRFR120TRVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |
|
IPI100N04S303MATMA1IR (Infineon Technologies) |
MOSFET N-CH TO262-3 |
|
2SK2916(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 14A TO3PIS |
|
BSS215PL6327HTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 1.5A SOT23-3 |
|
ZVN2535ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 350V 90MA E-LINE |
|
NTP75N03RSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 9.7A TO220AB |
|
NVD6416ANT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 17A DPAK |
|
BSA223SPIR (Infineon Technologies) |
MOSFET P-CH 20V 390MA SC75 |