English
简体中文
CAP CER 3.9PF 250V C0G/NP0 RAD
MOSFET N-CH 60V 85A TO220
FI DN_TB OM3 96F OFNP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7.5mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 88 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4560 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 268W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI26CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO262-3 |
|
IPD20N03LIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
IRFBE20SVishay / Siliconix |
MOSFET N-CH 800V 1.8A D2PAK |
|
IRFBC40LCSTRRVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
BSS816NW L6327IR (Infineon Technologies) |
MOSFET N-CH 20V 1.4A SOT323-3 |
|
IXFK60N55Q2Wickmann / Littelfuse |
MOSFET N-CH 550V 60A TO264AA |
|
IRLL2703PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 3.9A SOT223 |
|
AO4302Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 23A 8SOIC |
|
SPP80N03S2L05AKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
|
IPI80N04S204AKSA1IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO262-3 |
|
FQB3N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 2.8A D2PAK |
|
FDI2532Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 8A/79A I2PAK |
|
NVMFS5C404NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 53A/378A 5DFN |