English
简体中文
RESISTOR THIN FILM 1210 SIZE 1%
CAP CER 0.33UF 100V X7R 1812
SHAFT SOLID 3/8"D X 3"L
MOSFET N-CH 650V 6A TO220-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 660mOhm @ 3.2A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 200µA |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 543 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 62.5W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R6015ANZC8ROHM Semiconductor |
MOSFET N-CH 600V 15A TO3PF |
|
IRF7416GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 10A 8SO |
|
PMF77XN,115NXP Semiconductors |
MOSFET N-CH 30V 1.5A SOT323-3 |
|
IRL3714ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 36A TO220AB |
|
2SK0665G0LPanasonic |
MOSFET N-CH 20V 100MA SMINI3-F2 |
|
IRFR024TRLVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IRFR18N15DIR (Infineon Technologies) |
MOSFET N-CH 150V 18A DPAK |
|
IRFR3418PBFIR (Infineon Technologies) |
MOSFET N-CH 80V 70A DPAK |
|
IRF6616TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 19A DIRECTFET |
|
DMTH4004SPSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 40V 31A PWRDI5060 |
|
SI5415EDU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 25A PPAK |
|
PHD16N03T,118NXP Semiconductors |
MOSFET N-CH 30V 13.1A DPAK |
|
AON7556Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12A/12A 8DFN |