类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.1mOhm @ 21.7A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 105 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4500 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 5.2W (Ta), 104W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 10-PolarPAK® (M) |
包/箱: | 10-PolarPAK® (M) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SI8404DB-T1-E1Vishay / Siliconix |
MOSFET N-CH 8V 12.2A 4MICROFOOT |
![]() |
SI4466DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 9.5A 8SO |
![]() |
STD5NK52ZD-1STMicroelectronics |
MOSFET N-CH 520V 4.4A I-PAK |
![]() |
IRFR3412TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 48A DPAK |
![]() |
IRL1104LIR (Infineon Technologies) |
MOSFET N-CH 40V 104A TO262 |
![]() |
IPP070N06L GIR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO220-3 |
![]() |
STP15NM65NSTMicroelectronics |
MOSFET N-CH 650V 12A TO220 |
![]() |
SI7409ADN-T1-E3Vishay / Siliconix |
MOSFET P-CH 30V 7A PPAK1212-8 |
![]() |
NTB125N02RGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 24V 95A/120.5A D2PAK |
![]() |
TSM1NB60SCT A3GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 500MA TO92 |
![]() |
SIR838DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 150V 35A PPAK SO-8 |
![]() |
NVMFS6B14NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 11A/55A 5DFN |
![]() |
ZVN4306GVTCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 2.1A SOT223 |