English
简体中文
CAP TANT POLY 39UF 60V AXIAL
VARISTOR 33V 800A RADIAL
MOSFET P-CH 250V 430MA SOT223-4
DC DC CONVERTER 36V 75W
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SIPMOS® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 430mA (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4Ohm @ 430mA, 10V |
| vgs(th) (最大值) @ id: | 2V @ 370µA |
| 栅极电荷 (qg) (max) @ vgs: | 15.1 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 262 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.8W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-SOT223-4 |
| 包/箱: | TO-261-4, TO-261AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF1010ESTRRIR (Infineon Technologies) |
MOSFET N-CH 60V 84A D2PAK |
|
IRLR3303TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 35A DPAK |
|
IRFBC30STRLVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
FQPF4N25Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 2.8A TO220F |
|
SPP80N10LIR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220-3 |
|
NTLUS3A90PZCTBGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.6A 6UDFN |
|
IPD135N03LGXTIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
2SK302200LPanasonic |
MOSFET N-CH 60V 5A U-G2 |
|
TK50E08K3,S1X(SToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 75V 50A TO220-3 |
|
SI5856DC-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 4.4A 1206-8 |
|
STD55NH2LLT4STMicroelectronics |
MOSFET N-CH 24V 40A DPAK |
|
NVMFS5C628NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
|
IPP80P04P4L04AKSA1IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO220-3 |