English
简体中文
MOSFET N-CH 30V 13A 8SO
CROSSOVERS / WEICHEN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V |
| rds on (max) @ id, vgs: | 11mOhm @ 7A, 4.5V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 31 nC @ 5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF1902PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 4.2A 8SO |
|
STF12NM65STMicroelectronics |
MOSFET N-CH 650V TO220FP |
|
IXFH12N120Wickmann / Littelfuse |
MOSFET N-CH 1200V 12A TO247AD |
|
RJL6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
|
IRL1404ZLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 120A TO262 |
|
STL25N15F4STMicroelectronics |
MOSFET N-CH 150V 25A POWERFLAT |
|
SI3441BDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.45A 6TSOP |
|
AOC2411Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 3.4A 4WLCSP |
|
PHP119NQ06T,127NXP Semiconductors |
MOSFET N-CH 55V 75A TO220AB |
|
BSL202SNL6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 20V 7.5A TSOP-6 |
|
TSM2NB65CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 650V 2A TO252 |
|
IRF9610STRLVishay / Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
|
IRF3805SIR (Infineon Technologies) |
MOSFET N-CH 55V 75A D2PAK |