English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4.5A (Ta), 28A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 46mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2150 pF @ 75 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 115W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4846NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.7A/100A 5DFN |
|
FDB8443-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 25A TO263AB |
|
2N7000BU_TSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 200MA TO92-3 |
|
IPD031N03M GIR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-3 |
|
IPB12CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 67A D2PAK |
|
AON7210Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 30A/50A 8DFN |
|
IRF7811WTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8SO |
|
IRF734LVishay / Siliconix |
MOSFET N-CH 450V 4.9A I2PAK |
|
IRF7809AVIR (Infineon Technologies) |
MOSFET N-CH 30V 13.3A 8SO |
|
RJK1053DPB-00#J5Renesas Electronics America |
MOSFET N-CH 100V 25A LFPAK |
|
BUZ31LIR (Infineon Technologies) |
MOSFET N-CH 200V 13.5A TO220-3 |
|
RRS110N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 11A 8SOP |
|
BSB012NE2LXIR (Infineon Technologies) |
MOSFET N-CH 25V 37A/170A 2WDSON |
