English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta), 55A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 13A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2120 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.1W (Ta), 42W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET™ ST |
| 包/箱: | DirectFET™ Isometric ST |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP3NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 2.5A TO220AB |
|
TK4P60DB(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 3.7A DPAK |
|
IPS03N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 90A TO251-3 |
|
NTD24N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 24A DPAK |
|
IRFR130ATMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 13A DPAK |
|
IRL5602SIR (Infineon Technologies) |
MOSFET P-CH 20V 24A D2PAK |
|
SI7856ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 15A PPAK SO-8 |
|
IRLR014TRRVishay / Siliconix |
MOSFET N-CH 60V 7.7A DPAK |
|
IRF3709ZCSIR (Infineon Technologies) |
MOSFET N-CH 30V 87A D2PAK |
|
STFILED627STMicroelectronics |
MOSFET N-CH 620V 7A I2PAKFP |
|
IRFS4610TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 73A D2PAK |
|
STI100N10F7STMicroelectronics |
MOSFET N-CH 100V 80A I2PAK |
|
IRF7807D2PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 8.3A 8SO |
