类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 75A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 11mOhm @ 37.5A, 5V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 92 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4370 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.4W (Ta), 214W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK |
包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NVMFS5C645NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A 5DFN |
|
IRF6795MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 25V 32A DIRECTFET |
|
AO3422L_103Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 55V 2.1A SOT23-3 |
|
IRF3205LIR (Infineon Technologies) |
MOSFET N-CH 55V 110A TO262 |
|
2N6796Microsemi |
MOSFET N-CH 100V 8A TO39 |
|
FQB5N30TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 5.4A D2PAK |
|
STD95N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A DPAK |
|
IRFBC30ASTRRVishay / Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
|
ZVN0545ASTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 450V 90MA E-LINE |
|
IRFI9Z24NIR (Infineon Technologies) |
MOSFET P-CH 55V 9.5A TO220AB FP |
|
AON7452Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 2.5A/5.5A 8DFN |
|
RJK1555DPA-00#J0Renesas Electronics America |
MOSFET N-CH 150V 25A 8WPAK |
|
IPP023NE7N3GIR (Infineon Technologies) |
MOSFET N-CH 75V 120A TO220-3 |