English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMV™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 85 V |
| 电流 - 连续漏极 (id) @ 25°c: | 230A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.4mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 187 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 550W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS220 |
| 包/箱: | TO-220-3, Short Tab |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STL110NS3LLH7STMicroelectronics |
MOSFET N-CH 30V 120A POWERFLAT |
|
STW90NF20STMicroelectronics |
MOSFET N-CH 200V 83A TO247-3 |
|
IRF6775MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 4.9A DIRECTFET |
|
2SJ681(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 5A PW-MOLD2 |
|
BSO4410TIR (Infineon Technologies) |
MOSFET N-CH 30V 11.1A 8SO |
|
AOD2904Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 10.5A/70A TO252 |
|
IRF6215L-103PBFIR (Infineon Technologies) |
MOSFET P-CH 150V 13A TO262 |
|
IPP032N06N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220-3 |
|
IXFR80N15QWickmann / Littelfuse |
MOSFET N-CH 150V 75A ISOPLUS247 |
|
NTS4172NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 1.6A SC70-3 |
|
FDMC8884-F126Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/15A 8MLP |
|
PHU97NQ03LT,127NXP Semiconductors |
MOSFET N-CH 25V 75A I-PAK |
|
FQB10N20TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 10A D2PAK |
