English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 7.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 92 nC @ 5 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 6021 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 253W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTP130N065T2Wickmann / Littelfuse |
MOSFET N-CH 65V 130A TO220AB |
|
IRF1404ZSTRRIR (Infineon Technologies) |
MOSFET N-CH 40V 180A D2PAK |
|
FDD3N40TFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 400V 2A DPAK |
|
IPD12N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 30A TO252-3 |
|
IRF7476IR (Infineon Technologies) |
MOSFET N-CH 12V 15A 8SO |
|
AO4407ALAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 12A 8SOIC |
|
IXTP27N20TWickmann / Littelfuse |
MOSFET N-CH 200V 27A TO220AB |
|
FQPF5N50CTSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F |
|
2SK3844(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 45A TO220NIS |
|
2N7002TCZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 115MA SOT23-3 |
|
BUK9875-100A,115NXP Semiconductors |
MOSFET N-CH 100V 7A SOT-223 |
|
FQD3P50TM-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 500V 2.1A DPAK |
|
SPB10N10L GIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A TO263-3 |
