类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 25 V |
电流 - 连续漏极 (id) @ 25°c: | 9.5A (Ta), 32A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 8.4mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 2V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 16 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1400 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 1.3W (Ta), 50W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTD60N02RT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 8.5A/32A DPAK |
|
IRFBC40LCSVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
|
IRFR3711ZPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 93A DPAK |
|
SIA444DJT-T4-GE3Vishay / Siliconix |
MOSFET N-CH 30V 11A/12A PPAK |
|
NTMFS4825NFET3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17A/171A 5DFN |
|
IRLR8503TRIR (Infineon Technologies) |
MOSFET N-CH 30V 44A DPAK |
|
HUFA75639S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 56A D2PAK |
|
IXFC26N50PWickmann / Littelfuse |
MOSFET N-CH 500V 15A ISOPLUS220 |
|
APT10M11JVRMicrosemi |
MOSFET N-CH 100V 144A ISOTOP |
|
IRLZ14STRRVishay / Siliconix |
MOSFET N-CH 60V 10A D2PAK |
|
IRFR3707IR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
PHT4NQ10LT,135NXP Semiconductors |
MOSFET N-CH 100V 3.5A SOT223 |
|
STB18NM60NSTMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |