English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 30A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 47mOhm @ 30A, 5V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 62 nC @ 10 V |
| vgs (最大值): | +10V, -8V |
| 输入电容 (ciss) (max) @ vds: | 1350 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 96W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220-3 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIE816DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A 10POLARPAK |
|
AOD4162Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 16A/46A TO252 |
|
SUD50P10-43-E3Vishay / Siliconix |
MOSFET P-CH 100V 38A TO252 |
|
SPD22N08S2L-50IR (Infineon Technologies) |
MOSFET N-CH 75V 25A TO252-3 |
|
IPD035N06L3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-3 |
|
IRF7707GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 7A 8TSSOP |
|
SIE868DF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A 10POLARPAK |
|
2SK0615Panasonic |
MOSFET N-CH 80V 500MA M-A1 |
|
IRFB42N20DIR (Infineon Technologies) |
MOSFET N-CH 200V 44A TO220AB |
|
IRL3303D1IR (Infineon Technologies) |
MOSFET N-CH 30V 38A TO220AB |
|
IPD65R950CFDBTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 3.9A TO252-3 |
|
IPD05N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO252-3 |
|
IRF7524D1GTRPBFIR (Infineon Technologies) |
MOSFET P-CH 20V 1.7A 8USMD |
